
AO3401 MOSFET P-Channel 30V 4A - SOT-23 SMD Package
The AO3401 SOT-23 MOSFET P-Channel 30V 4A is a compact and efficient surface-mount power MOSFET designed for load switching, battery management, and high-side/low-side control applications. With its low RDS(on) and high current capability, this MOSFET provides excellent switching efficiency in compact electronic designs, making it suitable for DC-DC converters, battery protection circuits, and portable devices.
Features:
- Low RDS(on) for reduced conduction losses
- Supports continuous drain current up to 4A
- Fast switching speed suitable for high-frequency converters
- Compact SOT-23 surface-mount package
- Stable operation with low gate charge
- Compatible with automated SMT pick-and-place processes
Specifications:
- Type: P-Channel MOSFET
- Package: SOT-23
- Drain-Source Voltage (VDS): –30V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): –4A (TA = 25°C)
- Pulsed Drain Current (IDM): –20A
-
RDS(on):
-
30mΩ @ VGS = –4.5V, ID = –4A
-
52mΩ @ VGS = –2.5V, ID = –3A
-
- Gate Threshold Voltage (VGS(th)): –1V to –3V
- Total Gate Charge (Qg): 16nC (typ.) @ VGS = –4.5V
- Input Capacitance (Ciss): 850pF (typ.)
- Output Capacitance (Coss): 200pF (typ.)
- Reverse Transfer Capacitance (Crss): 70pF (typ.)
- Power Dissipation (PD): 1.4W
- Thermal Resistance, Junction-to-Ambient (RθJA): 90°C/W
- Operating Junction Temperature (TJ): –55°C to +150°C
- Storage Temperature (TSTG): –55°C to +150°C
- Body Diode: Integrated
- Body Diode Forward Voltage (VF): 1.2V @ IS = –2A
- Reverse Recovery Time (trr): 35ns
Package Includes:
1 × AO3401 MOSFET P-Channel 30V 4A - SOT-23 SMD Package
The AO3401 SOT-23 MOSFET P-Channel 30V 4A is a compact and efficient surface-mount power MOSFET designed for load switching, battery management, and high-side/low-side control applications. With its low RDS(on) and high current capability, this MOSFET provides excellent switching efficiency in compact electronic designs, making it suitable for DC-DC converters, battery protection circuits, and portable devices.
Features:
- Low RDS(on) for reduced conduction losses
- Supports continuous drain current up to 4A
- Fast switching speed suitable for high-frequency converters
- Compact SOT-23 surface-mount package
- Stable operation with low gate charge
- Compatible with automated SMT pick-and-place processes
Specifications:
- Type: P-Channel MOSFET
- Package: SOT-23
- Drain-Source Voltage (VDS): –30V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): –4A (TA = 25°C)
- Pulsed Drain Current (IDM): –20A
-
RDS(on):
-
30mΩ @ VGS = –4.5V, ID = –4A
-
52mΩ @ VGS = –2.5V, ID = –3A
-
- Gate Threshold Voltage (VGS(th)): –1V to –3V
- Total Gate Charge (Qg): 16nC (typ.) @ VGS = –4.5V
- Input Capacitance (Ciss): 850pF (typ.)
- Output Capacitance (Coss): 200pF (typ.)
- Reverse Transfer Capacitance (Crss): 70pF (typ.)
- Power Dissipation (PD): 1.4W
- Thermal Resistance, Junction-to-Ambient (RθJA): 90°C/W
- Operating Junction Temperature (TJ): –55°C to +150°C
- Storage Temperature (TSTG): –55°C to +150°C
- Body Diode: Integrated
- Body Diode Forward Voltage (VF): 1.2V @ IS = –2A
- Reverse Recovery Time (trr): 35ns
Package Includes:
1 × AO3401 MOSFET P-Channel 30V 4A - SOT-23 SMD Package
Original: $0.03
-67%$0.03
$0.01Description
The AO3401 SOT-23 MOSFET P-Channel 30V 4A is a compact and efficient surface-mount power MOSFET designed for load switching, battery management, and high-side/low-side control applications. With its low RDS(on) and high current capability, this MOSFET provides excellent switching efficiency in compact electronic designs, making it suitable for DC-DC converters, battery protection circuits, and portable devices.
Features:
- Low RDS(on) for reduced conduction losses
- Supports continuous drain current up to 4A
- Fast switching speed suitable for high-frequency converters
- Compact SOT-23 surface-mount package
- Stable operation with low gate charge
- Compatible with automated SMT pick-and-place processes
Specifications:
- Type: P-Channel MOSFET
- Package: SOT-23
- Drain-Source Voltage (VDS): –30V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): –4A (TA = 25°C)
- Pulsed Drain Current (IDM): –20A
-
RDS(on):
-
30mΩ @ VGS = –4.5V, ID = –4A
-
52mΩ @ VGS = –2.5V, ID = –3A
-
- Gate Threshold Voltage (VGS(th)): –1V to –3V
- Total Gate Charge (Qg): 16nC (typ.) @ VGS = –4.5V
- Input Capacitance (Ciss): 850pF (typ.)
- Output Capacitance (Coss): 200pF (typ.)
- Reverse Transfer Capacitance (Crss): 70pF (typ.)
- Power Dissipation (PD): 1.4W
- Thermal Resistance, Junction-to-Ambient (RθJA): 90°C/W
- Operating Junction Temperature (TJ): –55°C to +150°C
- Storage Temperature (TSTG): –55°C to +150°C
- Body Diode: Integrated
- Body Diode Forward Voltage (VF): 1.2V @ IS = –2A
- Reverse Recovery Time (trr): 35ns
Package Includes:
1 × AO3401 MOSFET P-Channel 30V 4A - SOT-23 SMD Package
























