
BC548 Transistor SOT-23 SMD Package
The BC548 is a widely used general-purpose NPN bipolar junction transistor (BJT) in a small SOT-23 surface-mount device (SMD) package. It is known for its versatility in various electronic circuits and applications, from amplification to switching.
Specifications:
-
Type: NPN Transistor
-
Collector-Emitter Voltage (Vce): 30V
-
Collector-Base Voltage (Vcbo): 30V
-
Emitter-Base Voltage (Vebo): 5V
-
Collector Current (Ic): 100mA
-
Power Dissipation (Ptot): 500mW
Pin Configuration:
-
Emitter
-
Base
-
Collector
Key Characteristics:
-
DC Current Gain (hFE): Typically ranges from 110 to 800, depending on the specific model (A, B, or C).
-
Transition Frequency (fT): 150MHz
-
Collector-Emitter Saturation Voltage (Vce(sat)): 200mV
-
Noise Figure: 2dB
Features:
-
High DC Current Gain
-
Low Noise
-
High Transition Frequency
-
Low Saturation Voltage
-
Suitable for surface-mount applications
Note: Product images are for illustrative purposes only and may differ from the actual product.
The BC548 is a widely used general-purpose NPN bipolar junction transistor (BJT) in a small SOT-23 surface-mount device (SMD) package. It is known for its versatility in various electronic circuits and applications, from amplification to switching.
Specifications:
-
Type: NPN Transistor
-
Collector-Emitter Voltage (Vce): 30V
-
Collector-Base Voltage (Vcbo): 30V
-
Emitter-Base Voltage (Vebo): 5V
-
Collector Current (Ic): 100mA
-
Power Dissipation (Ptot): 500mW
Pin Configuration:
-
Emitter
-
Base
-
Collector
Key Characteristics:
-
DC Current Gain (hFE): Typically ranges from 110 to 800, depending on the specific model (A, B, or C).
-
Transition Frequency (fT): 150MHz
-
Collector-Emitter Saturation Voltage (Vce(sat)): 200mV
-
Noise Figure: 2dB
Features:
-
High DC Current Gain
-
Low Noise
-
High Transition Frequency
-
Low Saturation Voltage
-
Suitable for surface-mount applications
Note: Product images are for illustrative purposes only and may differ from the actual product.
Description
The BC548 is a widely used general-purpose NPN bipolar junction transistor (BJT) in a small SOT-23 surface-mount device (SMD) package. It is known for its versatility in various electronic circuits and applications, from amplification to switching.
Specifications:
-
Type: NPN Transistor
-
Collector-Emitter Voltage (Vce): 30V
-
Collector-Base Voltage (Vcbo): 30V
-
Emitter-Base Voltage (Vebo): 5V
-
Collector Current (Ic): 100mA
-
Power Dissipation (Ptot): 500mW
Pin Configuration:
-
Emitter
-
Base
-
Collector
Key Characteristics:
-
DC Current Gain (hFE): Typically ranges from 110 to 800, depending on the specific model (A, B, or C).
-
Transition Frequency (fT): 150MHz
-
Collector-Emitter Saturation Voltage (Vce(sat)): 200mV
-
Noise Figure: 2dB
Features:
-
High DC Current Gain
-
Low Noise
-
High Transition Frequency
-
Low Saturation Voltage
-
Suitable for surface-mount applications
Note: Product images are for illustrative purposes only and may differ from the actual product.
























