The BC846BLT1G is a general-purpose NPN silicon bipolar junction transistor (BJT) designed for low-power amplification and switching applications. It comes in a small SOT-23 surface-mount device (SMD) package, making it suitable for compact and high-density electronic designs.

Specifications:

• Type: NPN Transistor

• Collector-Emitter Voltage (Vce): 65V

• Collector-Base Voltage (Vcbo): 80V

• Emitter-Base Voltage (Vebo): 6V

• Collector Current (Ic): 100mA

• Power Dissipation (Ptot): 310mW

Pin Configuration:

1. Emitter

2. Base

3. Collector

Key Characteristics:

• DC Current Gain (hFE): Typically ranges from 110 to 800.

• Transition Frequency (fT): 100MHz

• Collector-Emitter Saturation Voltage (Vce(sat)): 250mV

• Noise Figure: 4dB

Features:

• High DC Current Gain

• Low Saturation Voltage

• High Transition Frequency

• Suitable for surface-mount applications

• Low Noise

Note: Product images are for illustrative purposes only and may differ from the actual product.