BC847CLT1G - 45V 100mA NPN Transistor SOT-23 SMD Package
The BC847CLT1G is a widely used NPN transistor with the following features and specifications:
Specifications:
-
Type: NPN Transistor
-
Collector-Emitter Voltage (Vce): 45V
-
Collector Current (Ic): 100mA
-
Package: SOT-23 (Surface Mount Device - SMD)
Pin Configuration:
-
Emitter
-
Base
-
Collector
Key Characteristics:
-
DC Current Gain (hFE): Typically ranges from 110 to 800.
-
Collector-Base Voltage (Vcbo): 50V
-
Emitter-Base Voltage (Vebo): 5V
-
Power Dissipation (Ptot): 250mW
-
Transition Frequency (fT): 100MHz
Note: Product images are for illustrative purposes only and may differ from the actual product.
The BC847CLT1G is a widely used NPN transistor with the following features and specifications:
Specifications:
-
Type: NPN Transistor
-
Collector-Emitter Voltage (Vce): 45V
-
Collector Current (Ic): 100mA
-
Package: SOT-23 (Surface Mount Device - SMD)
Pin Configuration:
-
Emitter
-
Base
-
Collector
Key Characteristics:
-
DC Current Gain (hFE): Typically ranges from 110 to 800.
-
Collector-Base Voltage (Vcbo): 50V
-
Emitter-Base Voltage (Vebo): 5V
-
Power Dissipation (Ptot): 250mW
-
Transition Frequency (fT): 100MHz
Note: Product images are for illustrative purposes only and may differ from the actual product.
Original: $0.02
-50%$0.02
$0.01Description
The BC847CLT1G is a widely used NPN transistor with the following features and specifications:
Specifications:
-
Type: NPN Transistor
-
Collector-Emitter Voltage (Vce): 45V
-
Collector Current (Ic): 100mA
-
Package: SOT-23 (Surface Mount Device - SMD)
Pin Configuration:
-
Emitter
-
Base
-
Collector
Key Characteristics:
-
DC Current Gain (hFE): Typically ranges from 110 to 800.
-
Collector-Base Voltage (Vcbo): 50V
-
Emitter-Base Voltage (Vebo): 5V
-
Power Dissipation (Ptot): 250mW
-
Transition Frequency (fT): 100MHz
Note: Product images are for illustrative purposes only and may differ from the actual product.
