The BCP56 is a high-voltage NPN bipolar junction transistor (BJT) designed for various applications, including switching and amplification. It is packaged in a SOT-223 surface-mount device (SMD) package, providing a compact and efficient solution for modern electronic designs.

Specifications:

• Type: NPN Transistor
• Collector-Emitter Voltage (Vce): 80V
• Collector-Base Voltage (Vcbo): 100V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 1A
• Power Dissipation (Ptot): 1.5W

Pin Configuration:

1. Emitter
2. Base
3. Collector

Key Characteristics:

• DC Current Gain (hFE): Typically ranges from 63 to 160.
• Transition Frequency (fT): 100MHz
• Collector-Emitter Saturation Voltage (Vce(sat)): 500mV at 500mA
• Noise Figure: Low

Features:

• High Collector-Emitter Voltage (80V)
• High Collector Current Capability (1A)
• High Power Dissipation (1.5W)
• High Transition Frequency
• Suitable for Surface-Mount Applications

Note: Product images are for illustrative purposes only and may differ from the actual product.