
BCV47 NPN Darlington Transistor SOT-23 SMD Package
The BCV47 is an NPN Darlington transistor, which is designed for high current gain and efficient switching applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it suitable for modern high-density electronic designs.
Specifications:
- Type: NPN Darlington Transistor
- Collector-Emitter Voltage (Vce): 45V
- Collector-Base Voltage (Vcbo): 45V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 500mA
- Power Dissipation (Ptot): 250mW
Pin Configuration:
- Emitter
- Base
- Collector
Key Characteristics:
- DC Current Gain (hFE): Typically ranges from 1000 to 10000.
- Collector-Emitter Saturation Voltage (Vce(sat)): 2V (max) at 500mA
- Base-Emitter Saturation Voltage (Vbe(sat)): 2V (max) at 500mA
Features:
- High Current Gain
- High Input Impedance
- Low Saturation Voltage
- Suitable for Surface-Mount Applications
Applications:
- Power Amplification
- Switching
- Signal Processing
- High-Gain Circuits
- Load Drivers
Note: Product images are for illustrative purposes only and may differ from the actual product.
The BCV47 is an NPN Darlington transistor, which is designed for high current gain and efficient switching applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it suitable for modern high-density electronic designs.
Specifications:
- Type: NPN Darlington Transistor
- Collector-Emitter Voltage (Vce): 45V
- Collector-Base Voltage (Vcbo): 45V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 500mA
- Power Dissipation (Ptot): 250mW
Pin Configuration:
- Emitter
- Base
- Collector
Key Characteristics:
- DC Current Gain (hFE): Typically ranges from 1000 to 10000.
- Collector-Emitter Saturation Voltage (Vce(sat)): 2V (max) at 500mA
- Base-Emitter Saturation Voltage (Vbe(sat)): 2V (max) at 500mA
Features:
- High Current Gain
- High Input Impedance
- Low Saturation Voltage
- Suitable for Surface-Mount Applications
Applications:
- Power Amplification
- Switching
- Signal Processing
- High-Gain Circuits
- Load Drivers
Note: Product images are for illustrative purposes only and may differ from the actual product.
Description
The BCV47 is an NPN Darlington transistor, which is designed for high current gain and efficient switching applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it suitable for modern high-density electronic designs.
Specifications:
- Type: NPN Darlington Transistor
- Collector-Emitter Voltage (Vce): 45V
- Collector-Base Voltage (Vcbo): 45V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 500mA
- Power Dissipation (Ptot): 250mW
Pin Configuration:
- Emitter
- Base
- Collector
Key Characteristics:
- DC Current Gain (hFE): Typically ranges from 1000 to 10000.
- Collector-Emitter Saturation Voltage (Vce(sat)): 2V (max) at 500mA
- Base-Emitter Saturation Voltage (Vbe(sat)): 2V (max) at 500mA
Features:
- High Current Gain
- High Input Impedance
- Low Saturation Voltage
- Suitable for Surface-Mount Applications
Applications:
- Power Amplification
- Switching
- Signal Processing
- High-Gain Circuits
- Load Drivers
Note: Product images are for illustrative purposes only and may differ from the actual product.
























