BCX56 NPN Bipolar Transistor BJT 80V 1A SOT-89 SMD Package
The BCX56 is a high-voltage NPN bipolar junction transistor (BJT) designed for various applications, including switching and amplification. It comes in a SOT-89 surface-mount device (SMD) package, providing a robust and efficient solution for modern electronic designs.
Specifications:
- Type: NPN Transistor
- Collector-Emitter Voltage (Vce): 80V
- Collector-Base Voltage (Vcbo): 100V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 1A
- Power Dissipation (Ptot): 1.2W
Pin Configuration:
- Emitter
- Base
- Collector
Key Characteristics:
- DC Current Gain (hFE): Typically ranges from 63 to 160.
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (Vce(sat)): 500mV at 500mA
- Noise Figure: Low
Features:
- High Collector-Emitter Voltage (80V)
- High Collector Current Capability (1A)
- High Power Dissipation (1.2W)
- High Transition Frequency
- Suitable for Surface-Mount Applications
Applications:
- General-Purpose Switching
- High-Voltage Amplification
- Power Management
- Signal Processing
- Automotive Electronics
Note: Product images are for illustrative purposes only and may differ from the actual product.
The BCX56 is a high-voltage NPN bipolar junction transistor (BJT) designed for various applications, including switching and amplification. It comes in a SOT-89 surface-mount device (SMD) package, providing a robust and efficient solution for modern electronic designs.
Specifications:
- Type: NPN Transistor
- Collector-Emitter Voltage (Vce): 80V
- Collector-Base Voltage (Vcbo): 100V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 1A
- Power Dissipation (Ptot): 1.2W
Pin Configuration:
- Emitter
- Base
- Collector
Key Characteristics:
- DC Current Gain (hFE): Typically ranges from 63 to 160.
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (Vce(sat)): 500mV at 500mA
- Noise Figure: Low
Features:
- High Collector-Emitter Voltage (80V)
- High Collector Current Capability (1A)
- High Power Dissipation (1.2W)
- High Transition Frequency
- Suitable for Surface-Mount Applications
Applications:
- General-Purpose Switching
- High-Voltage Amplification
- Power Management
- Signal Processing
- Automotive Electronics
Note: Product images are for illustrative purposes only and may differ from the actual product.
Description
The BCX56 is a high-voltage NPN bipolar junction transistor (BJT) designed for various applications, including switching and amplification. It comes in a SOT-89 surface-mount device (SMD) package, providing a robust and efficient solution for modern electronic designs.
Specifications:
- Type: NPN Transistor
- Collector-Emitter Voltage (Vce): 80V
- Collector-Base Voltage (Vcbo): 100V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 1A
- Power Dissipation (Ptot): 1.2W
Pin Configuration:
- Emitter
- Base
- Collector
Key Characteristics:
- DC Current Gain (hFE): Typically ranges from 63 to 160.
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (Vce(sat)): 500mV at 500mA
- Noise Figure: Low
Features:
- High Collector-Emitter Voltage (80V)
- High Collector Current Capability (1A)
- High Power Dissipation (1.2W)
- High Transition Frequency
- Suitable for Surface-Mount Applications
Applications:
- General-Purpose Switching
- High-Voltage Amplification
- Power Management
- Signal Processing
- Automotive Electronics
Note: Product images are for illustrative purposes only and may differ from the actual product.
