The BSS123LT1G is an N-Channel MOSFET designed for efficient switching and amplification in various electronic applications. It is housed in a small SOT-23 surface-mount device (SMD) package, making it suitable for compact and high-density circuit designs.

Key Features:

1. Type: N-Channel MOSFET

2. Package: SOT-23 (3-pin surface-mount package)

3. Maximum Voltage (VDS): 100V

4. Maximum Current (ID): 170mA

5. Low On-Resistance (RDS(on)): Typically 6Ω at VGS = 10V

6. Fast Switching Speed: Suitable for high-speed applications

7. Gate Threshold Voltage (VGS(th)): Typically 2V

Electrical Characteristics:

• Drain-Source Voltage (VDS): 100V

• Gate-Source Voltage (VGS): ±20V

• Continuous Drain Current (ID): 170mA

• Pulsed Drain Current (IDM): 1.0A

• Power Dissipation (Ptot): Typically 0.31W

• On-Resistance (RDS(on)):

  • 6Ω at VGS = 10V

  • 10Ω at VGS = 4.5V

• Gate Charge (Qg): Typically 2nC

Package and Pin Configuration:

The BSS123LT1G MOSFET is housed in a compact SOT-23 package with three pins:

• Pin 1: Gate (G)

• Pin 2: Source (S)

• Pin 3: Drain (D)

Package Contents:

1 x BSS123LT1G MOSFET 100V 170MA SOT-23 SMD Package

Note: Product images are for illustrative purposes only and may differ from the actual product.