BSS138 N-Channel Enhancement Mode MOSFET SOT-23 SMD Package
The BSS138 is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for general-purpose switching and amplification applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it ideal for high-density circuit board layouts. Here’s a detailed description of the product:
Key Features:
- Type: N-Channel Enhancement Mode MOSFET
- Package: SOT-23 (Surface Mount Device)
- Polarity: N-Channel
- Maximum Drain-Source Voltage (Vds): 50V
- Maximum Continuous Drain Current (Id): 220mA
- Maximum Power Dissipation (Pd): 300mW
- Low On-Resistance (Rds(on)): Typically 3.5Ω at Vgs = 10V
- Gate Threshold Voltage (Vgs(th)): 1.3V to 2.3V
Applications:
- Load Switching: Ideal for switching low-voltage loads.
- Signal Amplification: Suitable for signal amplification in various electronic circuits.
- Battery-Powered Applications: Commonly used in battery-powered applications due to its low power consumption.
- DC-DC Converters: Can be used in DC-DC converter circuits for efficient power conversion.
Physical Dimensions:
- Length: Approximately 2.92mm
- Width: Approximately 1.3mm
- Height: Approximately 1.1mm
Pin Configuration:
- Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.
- Pin 2 (Source): The source terminal, which is typically connected to the negative side of the load.
- Pin 3 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.
Electrical Characteristics:
- Vds (Drain-Source Voltage): 50V max
- Vgs (Gate-Source Voltage): ±20V max
- Id (Continuous Drain Current): 220mA max
- Ptot (Total Power Dissipation): 300mW max
- Rds(on) (On-Resistance): 3.5Ω typical at Vgs = 10V
- Qg (Total Gate Charge): 1.2nC typical
- td(on) (Turn-On Delay Time): 10ns typical
- td(off) (Turn-Off Delay Time): 20ns typical
Package Includes:
1 x BSS138 N-Channel Enhancement Mode MOSFET SOT-23 SMD Package
Note: Product images are for illustrative purposes only and may differ from the actual product.
The BSS138 is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for general-purpose switching and amplification applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it ideal for high-density circuit board layouts. Here’s a detailed description of the product:
Key Features:
- Type: N-Channel Enhancement Mode MOSFET
- Package: SOT-23 (Surface Mount Device)
- Polarity: N-Channel
- Maximum Drain-Source Voltage (Vds): 50V
- Maximum Continuous Drain Current (Id): 220mA
- Maximum Power Dissipation (Pd): 300mW
- Low On-Resistance (Rds(on)): Typically 3.5Ω at Vgs = 10V
- Gate Threshold Voltage (Vgs(th)): 1.3V to 2.3V
Applications:
- Load Switching: Ideal for switching low-voltage loads.
- Signal Amplification: Suitable for signal amplification in various electronic circuits.
- Battery-Powered Applications: Commonly used in battery-powered applications due to its low power consumption.
- DC-DC Converters: Can be used in DC-DC converter circuits for efficient power conversion.
Physical Dimensions:
- Length: Approximately 2.92mm
- Width: Approximately 1.3mm
- Height: Approximately 1.1mm
Pin Configuration:
- Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.
- Pin 2 (Source): The source terminal, which is typically connected to the negative side of the load.
- Pin 3 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.
Electrical Characteristics:
- Vds (Drain-Source Voltage): 50V max
- Vgs (Gate-Source Voltage): ±20V max
- Id (Continuous Drain Current): 220mA max
- Ptot (Total Power Dissipation): 300mW max
- Rds(on) (On-Resistance): 3.5Ω typical at Vgs = 10V
- Qg (Total Gate Charge): 1.2nC typical
- td(on) (Turn-On Delay Time): 10ns typical
- td(off) (Turn-Off Delay Time): 20ns typical
Package Includes:
1 x BSS138 N-Channel Enhancement Mode MOSFET SOT-23 SMD Package
Note: Product images are for illustrative purposes only and may differ from the actual product.
Description
The BSS138 is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for general-purpose switching and amplification applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it ideal for high-density circuit board layouts. Here’s a detailed description of the product:
Key Features:
- Type: N-Channel Enhancement Mode MOSFET
- Package: SOT-23 (Surface Mount Device)
- Polarity: N-Channel
- Maximum Drain-Source Voltage (Vds): 50V
- Maximum Continuous Drain Current (Id): 220mA
- Maximum Power Dissipation (Pd): 300mW
- Low On-Resistance (Rds(on)): Typically 3.5Ω at Vgs = 10V
- Gate Threshold Voltage (Vgs(th)): 1.3V to 2.3V
Applications:
- Load Switching: Ideal for switching low-voltage loads.
- Signal Amplification: Suitable for signal amplification in various electronic circuits.
- Battery-Powered Applications: Commonly used in battery-powered applications due to its low power consumption.
- DC-DC Converters: Can be used in DC-DC converter circuits for efficient power conversion.
Physical Dimensions:
- Length: Approximately 2.92mm
- Width: Approximately 1.3mm
- Height: Approximately 1.1mm
Pin Configuration:
- Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.
- Pin 2 (Source): The source terminal, which is typically connected to the negative side of the load.
- Pin 3 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.
Electrical Characteristics:
- Vds (Drain-Source Voltage): 50V max
- Vgs (Gate-Source Voltage): ±20V max
- Id (Continuous Drain Current): 220mA max
- Ptot (Total Power Dissipation): 300mW max
- Rds(on) (On-Resistance): 3.5Ω typical at Vgs = 10V
- Qg (Total Gate Charge): 1.2nC typical
- td(on) (Turn-On Delay Time): 10ns typical
- td(off) (Turn-Off Delay Time): 20ns typical
Package Includes:
1 x BSS138 N-Channel Enhancement Mode MOSFET SOT-23 SMD Package
Note: Product images are for illustrative purposes only and may differ from the actual product.
