
BT138 600V 12A TRIAC Thyristor - TO-262 DIP Package
The BT138 600V 12A TRIAC Thyristor - TO-262 Package is built using a glass-passivated junction and high dv/dt process technology, ensuring strong reliability and stable four-quadrant triggering. It is suitable for temperature control, motor speed control, light dimming, AC switching and general domestic or industrial AC load applications.
Features:
- 4-quadrant triggering capability
- High dv/dt performance
- High surge current rating
- Reliable glass-passivated junction
- Suitable for resistive and inductive AC loads
- Thermally efficient TO-262 package
Specifications:
- Repetitive Peak Off-State Voltage (VDRM): 600V
- Repetitive Peak Reverse Voltage (VRRM): 600V
- RMS On-State Current IT(RMS): 12A (Tc ≤ 102°C)
- Non-Repetitive Surge Peak Current ITSM (50Hz, 1 cycle): 120A
- Non-Repetitive Surge Peak Current ITSM (60Hz, 1 cycle): 78A
- I²t Value for Fusing: 50A²s
- Critical Rate of Rise of On-State Current di/dt: 4A/µs
- Gate Trigger Current IGT (Quadrants I–III): ≤5mA
- Gate Trigger Current IGT (Quadrant IV): ≤25mA
- Gate Trigger Voltage VGT: ≤1.3V
- Holding Current IH: ≤50mA
- Latching Current IL: ≤70mA
- Peak On-State Voltage VTM (IT = 18A): ≤1.50V
- Off-State Leakage Current IDRM/IRRM at 25°C: ≤0.5mA
- Off-State Leakage Current IDRM/IRRM at 125°C: ≤50mA
- dv/dt (Rise of Off-State Voltage): 500V/µs (min), 1000V/µs (typ)
- Thermal Resistance Junction-to-Case RθJC: 2.4°C/W
- Operating Junction Temperature (TJ): -40°C to +150°C
- Storage Temperature (TSTG): -40°C to +150°C
Package Includes:
1 × BT138 600V 12A TRIAC Thyristor - TO-262 Package
The BT138 600V 12A TRIAC Thyristor - TO-262 Package is built using a glass-passivated junction and high dv/dt process technology, ensuring strong reliability and stable four-quadrant triggering. It is suitable for temperature control, motor speed control, light dimming, AC switching and general domestic or industrial AC load applications.
Features:
- 4-quadrant triggering capability
- High dv/dt performance
- High surge current rating
- Reliable glass-passivated junction
- Suitable for resistive and inductive AC loads
- Thermally efficient TO-262 package
Specifications:
- Repetitive Peak Off-State Voltage (VDRM): 600V
- Repetitive Peak Reverse Voltage (VRRM): 600V
- RMS On-State Current IT(RMS): 12A (Tc ≤ 102°C)
- Non-Repetitive Surge Peak Current ITSM (50Hz, 1 cycle): 120A
- Non-Repetitive Surge Peak Current ITSM (60Hz, 1 cycle): 78A
- I²t Value for Fusing: 50A²s
- Critical Rate of Rise of On-State Current di/dt: 4A/µs
- Gate Trigger Current IGT (Quadrants I–III): ≤5mA
- Gate Trigger Current IGT (Quadrant IV): ≤25mA
- Gate Trigger Voltage VGT: ≤1.3V
- Holding Current IH: ≤50mA
- Latching Current IL: ≤70mA
- Peak On-State Voltage VTM (IT = 18A): ≤1.50V
- Off-State Leakage Current IDRM/IRRM at 25°C: ≤0.5mA
- Off-State Leakage Current IDRM/IRRM at 125°C: ≤50mA
- dv/dt (Rise of Off-State Voltage): 500V/µs (min), 1000V/µs (typ)
- Thermal Resistance Junction-to-Case RθJC: 2.4°C/W
- Operating Junction Temperature (TJ): -40°C to +150°C
- Storage Temperature (TSTG): -40°C to +150°C
Package Includes:
1 × BT138 600V 12A TRIAC Thyristor - TO-262 Package
Description
The BT138 600V 12A TRIAC Thyristor - TO-262 Package is built using a glass-passivated junction and high dv/dt process technology, ensuring strong reliability and stable four-quadrant triggering. It is suitable for temperature control, motor speed control, light dimming, AC switching and general domestic or industrial AC load applications.
Features:
- 4-quadrant triggering capability
- High dv/dt performance
- High surge current rating
- Reliable glass-passivated junction
- Suitable for resistive and inductive AC loads
- Thermally efficient TO-262 package
Specifications:
- Repetitive Peak Off-State Voltage (VDRM): 600V
- Repetitive Peak Reverse Voltage (VRRM): 600V
- RMS On-State Current IT(RMS): 12A (Tc ≤ 102°C)
- Non-Repetitive Surge Peak Current ITSM (50Hz, 1 cycle): 120A
- Non-Repetitive Surge Peak Current ITSM (60Hz, 1 cycle): 78A
- I²t Value for Fusing: 50A²s
- Critical Rate of Rise of On-State Current di/dt: 4A/µs
- Gate Trigger Current IGT (Quadrants I–III): ≤5mA
- Gate Trigger Current IGT (Quadrant IV): ≤25mA
- Gate Trigger Voltage VGT: ≤1.3V
- Holding Current IH: ≤50mA
- Latching Current IL: ≤70mA
- Peak On-State Voltage VTM (IT = 18A): ≤1.50V
- Off-State Leakage Current IDRM/IRRM at 25°C: ≤0.5mA
- Off-State Leakage Current IDRM/IRRM at 125°C: ≤50mA
- dv/dt (Rise of Off-State Voltage): 500V/µs (min), 1000V/µs (typ)
- Thermal Resistance Junction-to-Case RθJC: 2.4°C/W
- Operating Junction Temperature (TJ): -40°C to +150°C
- Storage Temperature (TSTG): -40°C to +150°C
Package Includes:
1 × BT138 600V 12A TRIAC Thyristor - TO-262 Package
























