
CJ3400 30V 5.8A 350mW N-Channel MOSFET SOT-23 SMD Package
The CJ3400 is an N-Channel MOSFET designed for efficient switching and amplification in a variety of electronic applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it suitable for high-density circuit designs.
Key Features:
- Type: N-Channel MOSFET
- Package: SOT-23 (3-pin surface-mount package)
- Maximum Voltage (VDS): 30V
- Maximum Current (ID): 5.8A
- Power Dissipation (Ptot): 350mW
- Low On-Resistance (RDS(on)): Typically 25 mΩ at VGS = 10V
- Fast Switching Speed: Ideal for high-speed applications
- Gate Threshold Voltage (VGS(th)): Typically 1.0V
Electrical Characteristics:
- Drain-Source Voltage (VDS): 30V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 5.8A
- Pulsed Drain Current (IDM): 20A
- Power Dissipation (Ptot): 350mW
-
On-Resistance (RDS(on)):
- 25 mΩ at VGS = 10V
- 40 mΩ at VGS = 4.5V
- Gate Charge (Qg): Typically 9nC
Package and Pin Configuration:
The CJ3400 MOSFET is housed in a compact SOT-23 package with three pins:
- Pin 1: Gate (G)
- Pin 2: Source (S)
- Pin 3: Drain (D)
Note: Product images are for illustrative purposes only and may differ from the actual product.
The CJ3400 is an N-Channel MOSFET designed for efficient switching and amplification in a variety of electronic applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it suitable for high-density circuit designs.
Key Features:
- Type: N-Channel MOSFET
- Package: SOT-23 (3-pin surface-mount package)
- Maximum Voltage (VDS): 30V
- Maximum Current (ID): 5.8A
- Power Dissipation (Ptot): 350mW
- Low On-Resistance (RDS(on)): Typically 25 mΩ at VGS = 10V
- Fast Switching Speed: Ideal for high-speed applications
- Gate Threshold Voltage (VGS(th)): Typically 1.0V
Electrical Characteristics:
- Drain-Source Voltage (VDS): 30V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 5.8A
- Pulsed Drain Current (IDM): 20A
- Power Dissipation (Ptot): 350mW
-
On-Resistance (RDS(on)):
- 25 mΩ at VGS = 10V
- 40 mΩ at VGS = 4.5V
- Gate Charge (Qg): Typically 9nC
Package and Pin Configuration:
The CJ3400 MOSFET is housed in a compact SOT-23 package with three pins:
- Pin 1: Gate (G)
- Pin 2: Source (S)
- Pin 3: Drain (D)
Note: Product images are for illustrative purposes only and may differ from the actual product.
Original: $0.04
-75%$0.04
$0.01Description
The CJ3400 is an N-Channel MOSFET designed for efficient switching and amplification in a variety of electronic applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it suitable for high-density circuit designs.
Key Features:
- Type: N-Channel MOSFET
- Package: SOT-23 (3-pin surface-mount package)
- Maximum Voltage (VDS): 30V
- Maximum Current (ID): 5.8A
- Power Dissipation (Ptot): 350mW
- Low On-Resistance (RDS(on)): Typically 25 mΩ at VGS = 10V
- Fast Switching Speed: Ideal for high-speed applications
- Gate Threshold Voltage (VGS(th)): Typically 1.0V
Electrical Characteristics:
- Drain-Source Voltage (VDS): 30V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 5.8A
- Pulsed Drain Current (IDM): 20A
- Power Dissipation (Ptot): 350mW
-
On-Resistance (RDS(on)):
- 25 mΩ at VGS = 10V
- 40 mΩ at VGS = 4.5V
- Gate Charge (Qg): Typically 9nC
Package and Pin Configuration:
The CJ3400 MOSFET is housed in a compact SOT-23 package with three pins:
- Pin 1: Gate (G)
- Pin 2: Source (S)
- Pin 3: Drain (D)
Note: Product images are for illustrative purposes only and may differ from the actual product.
























