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CJ3400 30V 5.8A 350mW N-Channel MOSFET SOT-23 SMD Package

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CJ3400 30V 5.8A 350mW N-Channel MOSFET SOT-23 SMD Package

The CJ3400 is an N-Channel MOSFET designed for efficient switching and amplification in a variety of electronic applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it suitable for high-density circuit designs.

Key Features:

  1. Type: N-Channel MOSFET
  2. Package: SOT-23 (3-pin surface-mount package)
  3. Maximum Voltage (VDS): 30V
  4. Maximum Current (ID): 5.8A
  5. Power Dissipation (Ptot): 350mW
  6. Low On-Resistance (RDS(on)): Typically 25 mΩ at VGS = 10V
  7. Fast Switching Speed: Ideal for high-speed applications
  8. Gate Threshold Voltage (VGS(th)): Typically 1.0V

Electrical Characteristics:

  • Drain-Source Voltage (VDS): 30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 5.8A
  • Pulsed Drain Current (IDM): 20A
  • Power Dissipation (Ptot): 350mW
  • On-Resistance (RDS(on)):
    • 25 mΩ at VGS = 10V
    • 40 mΩ at VGS = 4.5V
  • Gate Charge (Qg): Typically 9nC

Package and Pin Configuration:

The CJ3400 MOSFET is housed in a compact SOT-23 package with three pins:

  • Pin 1: Gate (G)
  • Pin 2: Source (S)
  • Pin 3: Drain (D)

Note: Product images are for illustrative purposes only and may differ from the actual product.

The CJ3400 is an N-Channel MOSFET designed for efficient switching and amplification in a variety of electronic applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it suitable for high-density circuit designs.

Key Features:

  1. Type: N-Channel MOSFET
  2. Package: SOT-23 (3-pin surface-mount package)
  3. Maximum Voltage (VDS): 30V
  4. Maximum Current (ID): 5.8A
  5. Power Dissipation (Ptot): 350mW
  6. Low On-Resistance (RDS(on)): Typically 25 mΩ at VGS = 10V
  7. Fast Switching Speed: Ideal for high-speed applications
  8. Gate Threshold Voltage (VGS(th)): Typically 1.0V

Electrical Characteristics:

  • Drain-Source Voltage (VDS): 30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 5.8A
  • Pulsed Drain Current (IDM): 20A
  • Power Dissipation (Ptot): 350mW
  • On-Resistance (RDS(on)):
    • 25 mΩ at VGS = 10V
    • 40 mΩ at VGS = 4.5V
  • Gate Charge (Qg): Typically 9nC

Package and Pin Configuration:

The CJ3400 MOSFET is housed in a compact SOT-23 package with three pins:

  • Pin 1: Gate (G)
  • Pin 2: Source (S)
  • Pin 3: Drain (D)

Note: Product images are for illustrative purposes only and may differ from the actual product.

$0.01

Original: $0.04

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CJ3400 30V 5.8A 350mW N-Channel MOSFET SOT-23 SMD Package

$0.04

$0.01

Description

The CJ3400 is an N-Channel MOSFET designed for efficient switching and amplification in a variety of electronic applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it suitable for high-density circuit designs.

Key Features:

  1. Type: N-Channel MOSFET
  2. Package: SOT-23 (3-pin surface-mount package)
  3. Maximum Voltage (VDS): 30V
  4. Maximum Current (ID): 5.8A
  5. Power Dissipation (Ptot): 350mW
  6. Low On-Resistance (RDS(on)): Typically 25 mΩ at VGS = 10V
  7. Fast Switching Speed: Ideal for high-speed applications
  8. Gate Threshold Voltage (VGS(th)): Typically 1.0V

Electrical Characteristics:

  • Drain-Source Voltage (VDS): 30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 5.8A
  • Pulsed Drain Current (IDM): 20A
  • Power Dissipation (Ptot): 350mW
  • On-Resistance (RDS(on)):
    • 25 mΩ at VGS = 10V
    • 40 mΩ at VGS = 4.5V
  • Gate Charge (Qg): Typically 9nC

Package and Pin Configuration:

The CJ3400 MOSFET is housed in a compact SOT-23 package with three pins:

  • Pin 1: Gate (G)
  • Pin 2: Source (S)
  • Pin 3: Drain (D)

Note: Product images are for illustrative purposes only and may differ from the actual product.

CJ3400 30V 5.8A 350mW N-Channel MOSFET SOT-23 SMD Package | QuartzComponents