The DMG1012UW-7 is an N-Channel MOSFET designed for high-efficiency switching and amplification in a variety of electronic applications. It is housed in a compact SOT-323 surface-mount device (SMD) package, making it suitable for high-density circuit designs.

Key Features:

1. Type: N-Channel MOSFET

2. Package: SOT-323 (3-pin surface-mount package)

3. Maximum Voltage (VDS): 20V

4. Maximum Current (ID): 880mA

5. Power Dissipation (Ptot): 250mW

6. Low On-Resistance (RDS(on)): Typically 0.4Ω at VGS = 4.5V

7. Fast Switching Speed: Ideal for high-speed applications

8. Gate Threshold Voltage (VGS(th)): Typically 1.2V

Electrical Characteristics:

• Drain-Source Voltage (VDS): 20V

• Gate-Source Voltage (VGS): ±12V

• Continuous Drain Current (ID): 880mA

• Pulsed Drain Current (IDM): 2.5A

• Power Dissipation (Ptot): 250mW

• On-Resistance (RDS(on)):

  • 0.4Ω at VGS = 4.5V

  • 0.5Ω at VGS = 2.5V

• Gate Charge (Qg): Typically 1.3nC

Package and Pin Configuration:

The DMG1012UW-7 MOSFET is housed in a compact SOT-323 package with three pins:

• Pin 1: Gate (G)

• Pin 2: Source (S)

• Pin 3: Drain (D)

Package Includes:

1 x DMG1012UW-7 N-Channel MOSFET SOT-323 SMD Package

Note: Product images are for illustrative purposes only and may differ from the actual product.