The FDS4559 is a complementary PowerTrench MOSFET pair featuring both N-channel and P-channel MOSFETs in a single SOIC-8 surface-mount package. Designed for efficient power switching and load management, this dual-MOSFET solution supports drain-source voltages up to ±60V, making it ideal for DC-DC converters, power management circuits, H-bridges, and motor drivers. With low on-resistance and fast switching characteristics, the FDS4559 ensures reduced power losses and compact design integration.

Features of FDS4559 Complementary MOSFET:

1. Contains both N-channel and P-channel MOSFETs in a single SO-8 package
2. Drain-Source Voltage: ±60V
3. Low RDS(on) for both channels enabling efficient switching
4. Ideal for push-pull and H-bridge configurations
5. Fast switching speed for high-frequency power designs
6. SO-8 compact SMD package suitable for dense PCB layouts

Specifications of FDS4559 Complementary MOSFET:

• Model: FDS4559
• Type: Complementary Power MOSFET (N + P Channel)
• Drain-Source Voltage (VDS): ±60V
• N-Channel RDS(on): 0.055Ω @ VGS = 10V
• P-Channel RDS(on): 0.085Ω @ VGS = -10V
• N-Channel Continuous Drain Current: 6.3A
• P-Channel Continuous Drain Current: -5.3A
• Package: SOIC-8 – SMD
• Operating Temperature Range: -55°C to +150°C

Package Includes:

1 × FDS4559 Complementary N and P-Channel Power MOSFET - SOIC-8 SMD Package