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IRF540 N-Channel Power MOSFET (Generic) - D2PAK - TO-263 Package

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IRF540 N-Channel Power MOSFET (Generic) - D2PAK - TO-263 Package

The IRF540 is an N-channel power MOSFET designed for high-speed switching and efficient power control in a wide range of applications including motor drivers, power supplies, and DC-DC converters. With a drain-source voltage of up to 100V and continuous current handling of 33A, this MOSFET offers low RDS(on) for minimal conduction losses and excellent thermal performance. Packaged in a surface-mount D2PAK (TO-263), it is ideal for compact and thermally demanding designs.

Features of IRF540 N-Channel Power MOSFET:

  1. N-channel enhancement-type MOSFET for switching and power control
  2. Low RDS(on) enables high efficiency and low heat generation
  3. High-speed switching capability
  4. TTL and CMOS logic-level compatible gate drive
  5. Rugged and reliable for industrial and consumer electronics
  6. D2PAK – TO-263 surface-mount package for easy integration
  7. RoHS compliant

Specifications of IRF540 N-Channel Power MOSFET:

  • Model: IRF540
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 33A
  • Gate Threshold Voltage (VGS(th)): 2.0V – 4.0V
  • RDS(on): 0.077Ω (max)Gate Charge (Qg): 67nC (typical)
  • Power Dissipation: 130W
  • Package: D2PAK – TO-263 – SMD
  • Operating Temperature: -55°C to +175°C
  • Manufacturer: Generic

Package Includes:

1 × IRF540 N-Channel Power MOSFET – Generic – D2PAK – TO-263 Package

The IRF540 is an N-channel power MOSFET designed for high-speed switching and efficient power control in a wide range of applications including motor drivers, power supplies, and DC-DC converters. With a drain-source voltage of up to 100V and continuous current handling of 33A, this MOSFET offers low RDS(on) for minimal conduction losses and excellent thermal performance. Packaged in a surface-mount D2PAK (TO-263), it is ideal for compact and thermally demanding designs.

Features of IRF540 N-Channel Power MOSFET:

  1. N-channel enhancement-type MOSFET for switching and power control
  2. Low RDS(on) enables high efficiency and low heat generation
  3. High-speed switching capability
  4. TTL and CMOS logic-level compatible gate drive
  5. Rugged and reliable for industrial and consumer electronics
  6. D2PAK – TO-263 surface-mount package for easy integration
  7. RoHS compliant

Specifications of IRF540 N-Channel Power MOSFET:

  • Model: IRF540
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 33A
  • Gate Threshold Voltage (VGS(th)): 2.0V – 4.0V
  • RDS(on): 0.077Ω (max)Gate Charge (Qg): 67nC (typical)
  • Power Dissipation: 130W
  • Package: D2PAK – TO-263 – SMD
  • Operating Temperature: -55°C to +175°C
  • Manufacturer: Generic

Package Includes:

1 × IRF540 N-Channel Power MOSFET – Generic – D2PAK – TO-263 Package

$0.12

Original: $0.34

-65%
IRF540 N-Channel Power MOSFET (Generic) - D2PAK - TO-263 Package

$0.34

$0.12

Description

The IRF540 is an N-channel power MOSFET designed for high-speed switching and efficient power control in a wide range of applications including motor drivers, power supplies, and DC-DC converters. With a drain-source voltage of up to 100V and continuous current handling of 33A, this MOSFET offers low RDS(on) for minimal conduction losses and excellent thermal performance. Packaged in a surface-mount D2PAK (TO-263), it is ideal for compact and thermally demanding designs.

Features of IRF540 N-Channel Power MOSFET:

  1. N-channel enhancement-type MOSFET for switching and power control
  2. Low RDS(on) enables high efficiency and low heat generation
  3. High-speed switching capability
  4. TTL and CMOS logic-level compatible gate drive
  5. Rugged and reliable for industrial and consumer electronics
  6. D2PAK – TO-263 surface-mount package for easy integration
  7. RoHS compliant

Specifications of IRF540 N-Channel Power MOSFET:

  • Model: IRF540
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 33A
  • Gate Threshold Voltage (VGS(th)): 2.0V – 4.0V
  • RDS(on): 0.077Ω (max)Gate Charge (Qg): 67nC (typical)
  • Power Dissipation: 130W
  • Package: D2PAK – TO-263 – SMD
  • Operating Temperature: -55°C to +175°C
  • Manufacturer: Generic

Package Includes:

1 × IRF540 N-Channel Power MOSFET – Generic – D2PAK – TO-263 Package

IRF540 N-Channel Power MOSFET (Generic) - D2PAK - TO-263 Package | QuartzComponents