The IRF840 is a high-voltage N-channel power MOSFET designed for efficient switching applications. With a drain-source voltage rating of 500V and continuous drain current of 8A, it is well-suited for use in SMPS, power inverters, motor drives, and other high-voltage circuits. It features low gate charge and fast switching capability, making it ideal for high-frequency power conversion tasks. The TO-263 (D2PAK) surface-mount package offers reliable thermal performance and space-saving integration in PCB designs.

Features of IRF840 N-Channel Power MOSFET:

1. N-channel enhancement-mode MOSFET with high-voltage tolerance
2. Drain-source voltage up to 500V
3. Continuous drain current of 8A
4. Fast switching performance with low gate charge
5. TO-263 surface-mount package (D2PAK) for efficient heat dissipation
6. Ideal for high-speed switching power supplies and inverters
7. Compatible with logic-level drive circuits

Specifications of IRF840 N-Channel Power MOSFET:

• Model: IRF840
• Type: N-Channel Power MOSFET
• Drain-Source Voltage (VDS): 500V
• Continuous Drain Current (ID): 8A
• Gate Threshold Voltage (VGS(th)): 2.0V – 4.0V
• RDS(on): 0.85Ω (max)
• Total Gate Charge (Qg): 67nC (typical)
• Power Dissipation: 125W
• Package: D2PAK – TO-263 – SMD
• Operating Temperature: -55°C to +150°C

Package Includes:

1 × IRF840 N-Channel Power MOSFET – D2PAK – TO-263 Package