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MJE2955T 10A 60V Bipolar (BJT) Single Transistor TO-220 DIP Package

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MJE2955T 10A 60V Bipolar (BJT) Single Transistor TO-220 DIP Package

MJE2955T 10A 60V Bipolar (BJT) Power Transistor (TO-220 Package) is a high-performance PNP transistor designed for high-current switching and amplification applications. It is widely used in power supplies, audio amplifiers, motor driver circuits, and general-purpose electronic projects requiring reliable and efficient power control.

This transistor offers stable operation, good DC gain, and efficient heat dissipation through its TO-220 package, making it suitable for both DIY electronics and industrial applications.

Features:

  1. High current handling capability up to 10A
  2. PNP bipolar junction transistor for power applications
  3. Stable DC gain for consistent performance
  4. Suitable for switching and amplification circuits
  5. TO-220 package ensures effective heat dissipation
  6. Reliable operation across a wide temperature range

Applications:

  1. Power supply circuits
  2. Audio amplifiers
  3. Motor driver circuits
  4. Switching regulators
  5. General-purpose electronics projects

Specifications:

Parameter Value
Transistor Type BJT (PNP)
Model MJE2955T
Collector-Emitter Voltage (VCEO) 60V
Collector-Base Voltage (VCBO) 70V
Emitter-Base Voltage (VEBO) 5V
Collector Current (Ic) 10A
Base Current (Ib) 6A
Power Dissipation 75W
DC Current Gain (hFE) 20 – 70
Transition Frequency (fT) 2 MHz
Operating Temperature -55°C to +150°C
Package TO-220
Dimensions 10 × 4 × 15 mm

 

Package Includes:

1 x MJE2955T 10A 60V Bipolar (BJT) Power Transistor (TO-220 Package)

MJE2955T 10A 60V Bipolar (BJT) Power Transistor (TO-220 Package) is a high-performance PNP transistor designed for high-current switching and amplification applications. It is widely used in power supplies, audio amplifiers, motor driver circuits, and general-purpose electronic projects requiring reliable and efficient power control.

This transistor offers stable operation, good DC gain, and efficient heat dissipation through its TO-220 package, making it suitable for both DIY electronics and industrial applications.

Features:

  1. High current handling capability up to 10A
  2. PNP bipolar junction transistor for power applications
  3. Stable DC gain for consistent performance
  4. Suitable for switching and amplification circuits
  5. TO-220 package ensures effective heat dissipation
  6. Reliable operation across a wide temperature range

Applications:

  1. Power supply circuits
  2. Audio amplifiers
  3. Motor driver circuits
  4. Switching regulators
  5. General-purpose electronics projects

Specifications:

Parameter Value
Transistor Type BJT (PNP)
Model MJE2955T
Collector-Emitter Voltage (VCEO) 60V
Collector-Base Voltage (VCBO) 70V
Emitter-Base Voltage (VEBO) 5V
Collector Current (Ic) 10A
Base Current (Ib) 6A
Power Dissipation 75W
DC Current Gain (hFE) 20 – 70
Transition Frequency (fT) 2 MHz
Operating Temperature -55°C to +150°C
Package TO-220
Dimensions 10 × 4 × 15 mm

 

Package Includes:

1 x MJE2955T 10A 60V Bipolar (BJT) Power Transistor (TO-220 Package)

$0.14

Original: $0.39

-64%
MJE2955T 10A 60V Bipolar (BJT) Single Transistor TO-220 DIP Package

$0.39

$0.14

Description

MJE2955T 10A 60V Bipolar (BJT) Power Transistor (TO-220 Package) is a high-performance PNP transistor designed for high-current switching and amplification applications. It is widely used in power supplies, audio amplifiers, motor driver circuits, and general-purpose electronic projects requiring reliable and efficient power control.

This transistor offers stable operation, good DC gain, and efficient heat dissipation through its TO-220 package, making it suitable for both DIY electronics and industrial applications.

Features:

  1. High current handling capability up to 10A
  2. PNP bipolar junction transistor for power applications
  3. Stable DC gain for consistent performance
  4. Suitable for switching and amplification circuits
  5. TO-220 package ensures effective heat dissipation
  6. Reliable operation across a wide temperature range

Applications:

  1. Power supply circuits
  2. Audio amplifiers
  3. Motor driver circuits
  4. Switching regulators
  5. General-purpose electronics projects

Specifications:

Parameter Value
Transistor Type BJT (PNP)
Model MJE2955T
Collector-Emitter Voltage (VCEO) 60V
Collector-Base Voltage (VCBO) 70V
Emitter-Base Voltage (VEBO) 5V
Collector Current (Ic) 10A
Base Current (Ib) 6A
Power Dissipation 75W
DC Current Gain (hFE) 20 – 70
Transition Frequency (fT) 2 MHz
Operating Temperature -55°C to +150°C
Package TO-220
Dimensions 10 × 4 × 15 mm

 

Package Includes:

1 x MJE2955T 10A 60V Bipolar (BJT) Power Transistor (TO-220 Package)

MJE2955T 10A 60V Bipolar (BJT) Single Transistor TO-220 DIP Package | QuartzComponents