The MMBTA42 is a high-voltage NPN bipolar junction transistor (BJT) designed for a wide range of electronic applications. Housed in the compact SOT23 package, this transistor provides excellent electrical characteristics, making it suitable for high-voltage switching and signal amplification.

Features

• Transistor Type: NPN
• Material: Silicon
• Package Type: SOT23
• High Voltage Capability: Suitable for high-voltage applications
• Low Saturation Voltage: Enhances efficiency in switching applications
• Fast Switching Speed: Ideal for high-frequency operations
• Robust and Reliable: Offers long-term stability and durability

Specifications

• Collector-Emitter Voltage (Vce): 300V
• Collector-Base Voltage (Vcb): 300V
• Emitter-Base Voltage (Veb): 6V
• Collector Current (Ic): 500mA
• Power Dissipation (Pd): 625mW
• DC Current Gain (hFE): 40-160 at Ic = 10mA

Package Includes:

1 x MMBTA42 Transistor – SOT23