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MMBT4401 NPN BJT Transistor - SOT23

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MMBT4401 NPN BJT Transistor - SOT23

The MMBT4401 is a high-quality NPN bipolar junction transistor (BJT) designed for various electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it suitable for high-speed switching and signal amplification tasks.

Features

  • Transistor Type: NPN
  • Material: Silicon
  • Package Type: SOT23
  • High Current Gain: Ensures efficient signal amplification
  • Low Saturation Voltage: Enhances performance in switching applications
  • Fast Switching Speed: Ideal for high-frequency operations
  • Reliable and Durable: Provides long-term stability and robustness

Specifications

  • Collector-Emitter Voltage (Vce): 40V
  • Collector-Base Voltage (Vcb): 60V
  • Emitter-Base Voltage (Veb): 6V
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE): 100-300 at Ic = 10mA

Package Includes:

1 x MMBT4401 NPN BJT Transistor - SOT23

The MMBT4401 is a high-quality NPN bipolar junction transistor (BJT) designed for various electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it suitable for high-speed switching and signal amplification tasks.

Features

  • Transistor Type: NPN
  • Material: Silicon
  • Package Type: SOT23
  • High Current Gain: Ensures efficient signal amplification
  • Low Saturation Voltage: Enhances performance in switching applications
  • Fast Switching Speed: Ideal for high-frequency operations
  • Reliable and Durable: Provides long-term stability and robustness

Specifications

  • Collector-Emitter Voltage (Vce): 40V
  • Collector-Base Voltage (Vcb): 60V
  • Emitter-Base Voltage (Veb): 6V
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE): 100-300 at Ic = 10mA

Package Includes:

1 x MMBT4401 NPN BJT Transistor - SOT23

$0.05
MMBT4401 NPN BJT Transistor - SOT23
$0.05

Description

The MMBT4401 is a high-quality NPN bipolar junction transistor (BJT) designed for various electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it suitable for high-speed switching and signal amplification tasks.

Features

  • Transistor Type: NPN
  • Material: Silicon
  • Package Type: SOT23
  • High Current Gain: Ensures efficient signal amplification
  • Low Saturation Voltage: Enhances performance in switching applications
  • Fast Switching Speed: Ideal for high-frequency operations
  • Reliable and Durable: Provides long-term stability and robustness

Specifications

  • Collector-Emitter Voltage (Vce): 40V
  • Collector-Base Voltage (Vcb): 60V
  • Emitter-Base Voltage (Veb): 6V
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE): 100-300 at Ic = 10mA

Package Includes:

1 x MMBT4401 NPN BJT Transistor - SOT23

MMBT4401 NPN BJT Transistor - SOT23 | QuartzComponents