
MMBT4401 NPN BJT Transistor - SOT23
The MMBT4401 is a high-quality NPN bipolar junction transistor (BJT) designed for various electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it suitable for high-speed switching and signal amplification tasks.
Features
- Transistor Type: NPN
- Material: Silicon
- Package Type: SOT23
- High Current Gain: Ensures efficient signal amplification
- Low Saturation Voltage: Enhances performance in switching applications
- Fast Switching Speed: Ideal for high-frequency operations
- Reliable and Durable: Provides long-term stability and robustness
Specifications
- Collector-Emitter Voltage (Vce): 40V
- Collector-Base Voltage (Vcb): 60V
- Emitter-Base Voltage (Veb): 6V
- Collector Current (Ic): 600mA
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE): 100-300 at Ic = 10mA
Package Includes:
1 x MMBT4401 NPN BJT Transistor - SOT23
The MMBT4401 is a high-quality NPN bipolar junction transistor (BJT) designed for various electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it suitable for high-speed switching and signal amplification tasks.
Features
- Transistor Type: NPN
- Material: Silicon
- Package Type: SOT23
- High Current Gain: Ensures efficient signal amplification
- Low Saturation Voltage: Enhances performance in switching applications
- Fast Switching Speed: Ideal for high-frequency operations
- Reliable and Durable: Provides long-term stability and robustness
Specifications
- Collector-Emitter Voltage (Vce): 40V
- Collector-Base Voltage (Vcb): 60V
- Emitter-Base Voltage (Veb): 6V
- Collector Current (Ic): 600mA
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE): 100-300 at Ic = 10mA
Package Includes:
1 x MMBT4401 NPN BJT Transistor - SOT23
Description
The MMBT4401 is a high-quality NPN bipolar junction transistor (BJT) designed for various electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it suitable for high-speed switching and signal amplification tasks.
Features
- Transistor Type: NPN
- Material: Silicon
- Package Type: SOT23
- High Current Gain: Ensures efficient signal amplification
- Low Saturation Voltage: Enhances performance in switching applications
- Fast Switching Speed: Ideal for high-frequency operations
- Reliable and Durable: Provides long-term stability and robustness
Specifications
- Collector-Emitter Voltage (Vce): 40V
- Collector-Base Voltage (Vcb): 60V
- Emitter-Base Voltage (Veb): 6V
- Collector Current (Ic): 600mA
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE): 100-300 at Ic = 10mA
Package Includes:
1 x MMBT4401 NPN BJT Transistor - SOT23
























