
MMBTA56 PNP Transistor - SOT23
The MMBTA56 is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it ideal for high-voltage switching and signal amplification tasks.
Features
- Transistor Type: PNP
- Material: Silicon
- Package Type: SOT23
- High Voltage Capability: Suitable for high-voltage applications
- Low Saturation Voltage: Enhances efficiency in switching applications
- Fast Switching Speed: Ideal for high-frequency operations
- Robust and Reliable: Offers long-term stability and durability
Specifications
- Collector-Emitter Voltage (Vce): -80V
- Collector-Base Voltage (Vcb): -80V
- Emitter-Base Voltage (Veb): -5V
- Collector Current (Ic): -500mA
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE): 50-200 at Ic = -10mA
Package Includes:
1 x MMBTA56 PNP Transistor - SOT23
The MMBTA56 is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it ideal for high-voltage switching and signal amplification tasks.
Features
- Transistor Type: PNP
- Material: Silicon
- Package Type: SOT23
- High Voltage Capability: Suitable for high-voltage applications
- Low Saturation Voltage: Enhances efficiency in switching applications
- Fast Switching Speed: Ideal for high-frequency operations
- Robust and Reliable: Offers long-term stability and durability
Specifications
- Collector-Emitter Voltage (Vce): -80V
- Collector-Base Voltage (Vcb): -80V
- Emitter-Base Voltage (Veb): -5V
- Collector Current (Ic): -500mA
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE): 50-200 at Ic = -10mA
Package Includes:
1 x MMBTA56 PNP Transistor - SOT23
Description
The MMBTA56 is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it ideal for high-voltage switching and signal amplification tasks.
Features
- Transistor Type: PNP
- Material: Silicon
- Package Type: SOT23
- High Voltage Capability: Suitable for high-voltage applications
- Low Saturation Voltage: Enhances efficiency in switching applications
- Fast Switching Speed: Ideal for high-frequency operations
- Robust and Reliable: Offers long-term stability and durability
Specifications
- Collector-Emitter Voltage (Vce): -80V
- Collector-Base Voltage (Vcb): -80V
- Emitter-Base Voltage (Veb): -5V
- Collector Current (Ic): -500mA
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE): 50-200 at Ic = -10mA
Package Includes:
1 x MMBTA56 PNP Transistor - SOT23
























