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MMBTA56 PNP Transistor - SOT23

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MMBTA56 PNP Transistor - SOT23

The MMBTA56 is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it ideal for high-voltage switching and signal amplification tasks.

Features

  • Transistor Type: PNP
  • Material: Silicon
  • Package Type: SOT23
  • High Voltage Capability: Suitable for high-voltage applications
  • Low Saturation Voltage: Enhances efficiency in switching applications
  • Fast Switching Speed: Ideal for high-frequency operations
  • Robust and Reliable: Offers long-term stability and durability

Specifications

  • Collector-Emitter Voltage (Vce): -80V
  • Collector-Base Voltage (Vcb): -80V
  • Emitter-Base Voltage (Veb): -5V
  • Collector Current (Ic): -500mA
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE): 50-200 at Ic = -10mA

Package Includes:

1 x MMBTA56 PNP Transistor - SOT23

The MMBTA56 is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it ideal for high-voltage switching and signal amplification tasks.

Features

  • Transistor Type: PNP
  • Material: Silicon
  • Package Type: SOT23
  • High Voltage Capability: Suitable for high-voltage applications
  • Low Saturation Voltage: Enhances efficiency in switching applications
  • Fast Switching Speed: Ideal for high-frequency operations
  • Robust and Reliable: Offers long-term stability and durability

Specifications

  • Collector-Emitter Voltage (Vce): -80V
  • Collector-Base Voltage (Vcb): -80V
  • Emitter-Base Voltage (Veb): -5V
  • Collector Current (Ic): -500mA
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE): 50-200 at Ic = -10mA

Package Includes:

1 x MMBTA56 PNP Transistor - SOT23

$0.06
MMBTA56 PNP Transistor - SOT23
$0.06

Description

The MMBTA56 is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it ideal for high-voltage switching and signal amplification tasks.

Features

  • Transistor Type: PNP
  • Material: Silicon
  • Package Type: SOT23
  • High Voltage Capability: Suitable for high-voltage applications
  • Low Saturation Voltage: Enhances efficiency in switching applications
  • Fast Switching Speed: Ideal for high-frequency operations
  • Robust and Reliable: Offers long-term stability and durability

Specifications

  • Collector-Emitter Voltage (Vce): -80V
  • Collector-Base Voltage (Vcb): -80V
  • Emitter-Base Voltage (Veb): -5V
  • Collector Current (Ic): -500mA
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE): 50-200 at Ic = -10mA

Package Includes:

1 x MMBTA56 PNP Transistor - SOT23

MMBTA56 PNP Transistor - SOT23 | QuartzComponents