S8550 2TY PNP Transistor – SOT23
The S8550 2TY is a versatile PNP bipolar junction transistor (BJT) designed for a variety of electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it suitable for low to medium power switching and signal amplification tasks.
Features
- Transistor Type: PNP
- Material: Silicon
- Package Type: SOT23
- High Current Gain: Ensures efficient signal amplification
- Low Saturation Voltage: Enhances performance in switching applications
- Fast Switching Speed: Ideal for high-frequency operations
- Reliable and Durable: Provides long-term stability and robustness
Specifications
- Collector-Emitter Voltage (Vce): -25V
- Collector-Base Voltage (Vcb): -40V
- Emitter-Base Voltage (Veb): -5V
- Collector Current (Ic): -1.5A
- Power Dissipation (Pd): 300mW
- DC Current Gain (hFE): 110-300 at Ic = -1mA
Package Includes:
1 x S8550 2TY PNP Transistor – SOT23
The S8550 2TY is a versatile PNP bipolar junction transistor (BJT) designed for a variety of electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it suitable for low to medium power switching and signal amplification tasks.
Features
- Transistor Type: PNP
- Material: Silicon
- Package Type: SOT23
- High Current Gain: Ensures efficient signal amplification
- Low Saturation Voltage: Enhances performance in switching applications
- Fast Switching Speed: Ideal for high-frequency operations
- Reliable and Durable: Provides long-term stability and robustness
Specifications
- Collector-Emitter Voltage (Vce): -25V
- Collector-Base Voltage (Vcb): -40V
- Emitter-Base Voltage (Veb): -5V
- Collector Current (Ic): -1.5A
- Power Dissipation (Pd): 300mW
- DC Current Gain (hFE): 110-300 at Ic = -1mA
Package Includes:
1 x S8550 2TY PNP Transistor – SOT23
Description
The S8550 2TY is a versatile PNP bipolar junction transistor (BJT) designed for a variety of electronic applications. Encased in a compact SOT23 package, this transistor offers excellent electrical characteristics, making it suitable for low to medium power switching and signal amplification tasks.
Features
- Transistor Type: PNP
- Material: Silicon
- Package Type: SOT23
- High Current Gain: Ensures efficient signal amplification
- Low Saturation Voltage: Enhances performance in switching applications
- Fast Switching Speed: Ideal for high-frequency operations
- Reliable and Durable: Provides long-term stability and robustness
Specifications
- Collector-Emitter Voltage (Vce): -25V
- Collector-Base Voltage (Vcb): -40V
- Emitter-Base Voltage (Veb): -5V
- Collector Current (Ic): -1.5A
- Power Dissipation (Pd): 300mW
- DC Current Gain (hFE): 110-300 at Ic = -1mA
Package Includes:
1 x S8550 2TY PNP Transistor – SOT23
