The SI2301 A1SHB is a P-Channel MOSFET designed for efficient switching and amplification in a variety of electronic applications. It is encapsulated in a compact SOT-23 surface-mount device (SMD) package, making it ideal for space-constrained and high-density circuit designs.

Key Features:

1. Type: P-Channel MOSFET
2. Package: SOT-23 (3-pin surface-mount package)
3. Maximum Voltage (VDS): -20V
4. Maximum Current (ID): -2.8A
5. Power Dissipation (Ptot): 1.25W
6. Low On-Resistance (RDS(on)): Typically 85 mΩ at VGS = -4.5V
7. Fast Switching Speed: Suitable for high-speed applications
8. Gate Threshold Voltage (VGS(th)): Typically -1.0V

Electrical Characteristics:

• Drain-Source Voltage (VDS): -20V
• Gate-Source Voltage (VGS): ±12V
• Continuous Drain Current (ID): -2.8A
• Pulsed Drain Current (IDM): -10A
• Power Dissipation (Ptot): 1.25W
• On-Resistance (RDS(on)):
  • 85 mΩ at VGS = -4.5V
  • 150 mΩ at VGS = -2.5V
• Gate Charge (Qg): Typically 4.5nC

Package and Pin Configuration:

The SI2301 A1SHB MOSFET is housed in a compact SOT-23 package with three pins:

• Pin 1: Gate (G)
• Pin 2: Source (S)
• Pin 3: Drain (D)

Note: Product images are for illustrative purposes only and may differ from the actual product.