
SR1080 Schottky Barrier Diode 10A TO-220AB Package
The SR1080 Schottky Barrier Rectifier Diode 10A is built for efficient high-current rectification with low forward losses and fast switching capability. Its Schottky barrier construction ensures minimal power dissipation and stable thermal performance, making it ideal for low-voltage, high-efficiency power applications.
Features:
- Schottky barrier chip for low forward voltage drop
- High efficiency with reduced power loss
- Strong surge current capability for demanding loads
- Guard-ring construction for enhanced reliability
Specifications:
- Maximum Repetitive Peak Reverse Voltage (VRRM): 60 V
- Maximum RMS Voltage (VRMS): 42 V
- Maximum DC Blocking Voltage (VDC): 60 V
- Maximum Average Forward Rectified Current (IF(AV)): 10 A
- Peak Forward Surge Current (IFSM): 100 A
- Forward Voltage (VF): 0.80 V
- Peak Reverse Current (IR) at 25°C: 0.1 mA
- Peak Reverse Current (IR) at 100°C: 20 mA
- Typical Junction Capacitance (CJ): 280 pF
- Typical Thermal Resistance (RθJA): 3.0 °C/W
- Operating Temperature Range (TJ): -55°C to +150°C
- Storage Temperature Range (TSTG): -55°C to +150°C
Package Includes:
1 × SR1080 Schottky Rectifier Diode 10A
The SR1080 Schottky Barrier Rectifier Diode 10A is built for efficient high-current rectification with low forward losses and fast switching capability. Its Schottky barrier construction ensures minimal power dissipation and stable thermal performance, making it ideal for low-voltage, high-efficiency power applications.
Features:
- Schottky barrier chip for low forward voltage drop
- High efficiency with reduced power loss
- Strong surge current capability for demanding loads
- Guard-ring construction for enhanced reliability
Specifications:
- Maximum Repetitive Peak Reverse Voltage (VRRM): 60 V
- Maximum RMS Voltage (VRMS): 42 V
- Maximum DC Blocking Voltage (VDC): 60 V
- Maximum Average Forward Rectified Current (IF(AV)): 10 A
- Peak Forward Surge Current (IFSM): 100 A
- Forward Voltage (VF): 0.80 V
- Peak Reverse Current (IR) at 25°C: 0.1 mA
- Peak Reverse Current (IR) at 100°C: 20 mA
- Typical Junction Capacitance (CJ): 280 pF
- Typical Thermal Resistance (RθJA): 3.0 °C/W
- Operating Temperature Range (TJ): -55°C to +150°C
- Storage Temperature Range (TSTG): -55°C to +150°C
Package Includes:
1 × SR1080 Schottky Rectifier Diode 10A
Original: $0.25
-64%$0.25
$0.09Description
The SR1080 Schottky Barrier Rectifier Diode 10A is built for efficient high-current rectification with low forward losses and fast switching capability. Its Schottky barrier construction ensures minimal power dissipation and stable thermal performance, making it ideal for low-voltage, high-efficiency power applications.
Features:
- Schottky barrier chip for low forward voltage drop
- High efficiency with reduced power loss
- Strong surge current capability for demanding loads
- Guard-ring construction for enhanced reliability
Specifications:
- Maximum Repetitive Peak Reverse Voltage (VRRM): 60 V
- Maximum RMS Voltage (VRMS): 42 V
- Maximum DC Blocking Voltage (VDC): 60 V
- Maximum Average Forward Rectified Current (IF(AV)): 10 A
- Peak Forward Surge Current (IFSM): 100 A
- Forward Voltage (VF): 0.80 V
- Peak Reverse Current (IR) at 25°C: 0.1 mA
- Peak Reverse Current (IR) at 100°C: 20 mA
- Typical Junction Capacitance (CJ): 280 pF
- Typical Thermal Resistance (RθJA): 3.0 °C/W
- Operating Temperature Range (TJ): -55°C to +150°C
- Storage Temperature Range (TSTG): -55°C to +150°C
Package Includes:
1 × SR1080 Schottky Rectifier Diode 10A
























