The TP0610K-T1-GE3 is a P-Channel MOSFET from Vishay Intertechnology, designed for efficient switching and load management in compact circuit designs. With a maximum drain-source voltage of 60V and low on-resistance of 6Ω at Vgs -10V, this MOSFET is ideal for portable devices, power management circuits, and general-purpose switching in SMD applications.

Features of TP0610K-T1-GE3 MOSFET:

1. P-Channel enhancement mode MOSFET
2. Low on-resistance (6Ω at Vgs = -10V) for efficient switching
3. Compact SOT-23 surface-mount package
4. Continuous drain current up to 185mA
5. Peak drain current up to 500mA
6. Power dissipation up to 350mW
7. RoHS compliant and environmentally friendly

Specifications of TP0610K-T1-GE3 MOSFET:

• Type: P-Channel
• Drain-Source Voltage (Vds): -60V
• Continuous Drain Current (Id): -185mA
• Peak Drain Current (Idp): -500mA
• On-Resistance (RDS(on)): 6Ω @ Vgs = -10V
• Total Power Dissipation (Pd): 350mW
• Gate Threshold Voltage (Vgs(th)): -2V to -4V
• Package Type: SOT-23 – SMD
• Manufacturer: Vishay Intertech

Package Includes:

1 × TP0610K-T1-GE3 P-Channel MOSFET  – SOT-23 – SMD