HomeStore

UTT50N06MG N-Channel MOSFET TO-252 SMD Package

Product image 1

UTT50N06MG N-Channel MOSFET TO-252 SMD Package

The UTT50N06MG is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-current, high-voltage switching applications. It is housed in a TO-252 surface-mount device (SMD) package, making it suitable for high-density circuit board layouts and efficient heat dissipation. Here’s a detailed description of the product:

Key Features:

  • Type: N-Channel MOSFET
  • Package: TO-252 (Surface Mount Device)
  • Polarity: N-Channel
  • Maximum Drain-Source Voltage (Vds): 60V
  • Maximum Continuous Drain Current (Id): 50A
  • Maximum Power Dissipation (Pd): 125W
  • Low On-Resistance (Rds(on)): Typically 0.015Ω at Vgs = 10V
  • Gate Threshold Voltage (Vgs(th)): 2V to 4V

Applications:

  • Load Switching: Ideal for switching high-voltage and high-current loads.
  • Power Management: Suitable for use in power management applications in industrial and automotive systems.
  • Motor Drives: Commonly used in motor control and drive applications due to its high current capability.
  • DC-DC Converters: Can be used in high-efficiency DC-DC converter circuits.
  • Battery Protection: Useful in battery management systems for overcurrent protection.

Pin Configuration:

  • Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.
  • Pin 2 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.
  • Pin 3 (Source): The source terminal, which is typically connected to the negative side of the load.
  • Tab (Drain): The tab is electrically connected to the drain terminal, providing a low-resistance path for heat dissipation.

Electrical Characteristics:

  • Vds (Drain-Source Voltage): 60V max
  • Vgs (Gate-Source Voltage): ±20V max
  • Id (Continuous Drain Current): 50A max
  • Ptot (Total Power Dissipation): 125W max
  • Rds(on) (On-Resistance): 0.015Ω typical at Vgs = 10V
  • Qg (Total Gate Charge): 100nC typical
  • td(on) (Turn-On Delay Time): 20ns typical
  • td(off) (Turn-Off Delay Time): 45ns typical

Note: Product images are for illustrative purposes only and may differ from the actual product.

The UTT50N06MG is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-current, high-voltage switching applications. It is housed in a TO-252 surface-mount device (SMD) package, making it suitable for high-density circuit board layouts and efficient heat dissipation. Here’s a detailed description of the product:

Key Features:

  • Type: N-Channel MOSFET
  • Package: TO-252 (Surface Mount Device)
  • Polarity: N-Channel
  • Maximum Drain-Source Voltage (Vds): 60V
  • Maximum Continuous Drain Current (Id): 50A
  • Maximum Power Dissipation (Pd): 125W
  • Low On-Resistance (Rds(on)): Typically 0.015Ω at Vgs = 10V
  • Gate Threshold Voltage (Vgs(th)): 2V to 4V

Applications:

  • Load Switching: Ideal for switching high-voltage and high-current loads.
  • Power Management: Suitable for use in power management applications in industrial and automotive systems.
  • Motor Drives: Commonly used in motor control and drive applications due to its high current capability.
  • DC-DC Converters: Can be used in high-efficiency DC-DC converter circuits.
  • Battery Protection: Useful in battery management systems for overcurrent protection.

Pin Configuration:

  • Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.
  • Pin 2 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.
  • Pin 3 (Source): The source terminal, which is typically connected to the negative side of the load.
  • Tab (Drain): The tab is electrically connected to the drain terminal, providing a low-resistance path for heat dissipation.

Electrical Characteristics:

  • Vds (Drain-Source Voltage): 60V max
  • Vgs (Gate-Source Voltage): ±20V max
  • Id (Continuous Drain Current): 50A max
  • Ptot (Total Power Dissipation): 125W max
  • Rds(on) (On-Resistance): 0.015Ω typical at Vgs = 10V
  • Qg (Total Gate Charge): 100nC typical
  • td(on) (Turn-On Delay Time): 20ns typical
  • td(off) (Turn-Off Delay Time): 45ns typical

Note: Product images are for illustrative purposes only and may differ from the actual product.

$0.08

Original: $0.23

-65%
UTT50N06MG N-Channel MOSFET TO-252 SMD Package

$0.23

$0.08

Description

The UTT50N06MG is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-current, high-voltage switching applications. It is housed in a TO-252 surface-mount device (SMD) package, making it suitable for high-density circuit board layouts and efficient heat dissipation. Here’s a detailed description of the product:

Key Features:

  • Type: N-Channel MOSFET
  • Package: TO-252 (Surface Mount Device)
  • Polarity: N-Channel
  • Maximum Drain-Source Voltage (Vds): 60V
  • Maximum Continuous Drain Current (Id): 50A
  • Maximum Power Dissipation (Pd): 125W
  • Low On-Resistance (Rds(on)): Typically 0.015Ω at Vgs = 10V
  • Gate Threshold Voltage (Vgs(th)): 2V to 4V

Applications:

  • Load Switching: Ideal for switching high-voltage and high-current loads.
  • Power Management: Suitable for use in power management applications in industrial and automotive systems.
  • Motor Drives: Commonly used in motor control and drive applications due to its high current capability.
  • DC-DC Converters: Can be used in high-efficiency DC-DC converter circuits.
  • Battery Protection: Useful in battery management systems for overcurrent protection.

Pin Configuration:

  • Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.
  • Pin 2 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.
  • Pin 3 (Source): The source terminal, which is typically connected to the negative side of the load.
  • Tab (Drain): The tab is electrically connected to the drain terminal, providing a low-resistance path for heat dissipation.

Electrical Characteristics:

  • Vds (Drain-Source Voltage): 60V max
  • Vgs (Gate-Source Voltage): ±20V max
  • Id (Continuous Drain Current): 50A max
  • Ptot (Total Power Dissipation): 125W max
  • Rds(on) (On-Resistance): 0.015Ω typical at Vgs = 10V
  • Qg (Total Gate Charge): 100nC typical
  • td(on) (Turn-On Delay Time): 20ns typical
  • td(off) (Turn-Off Delay Time): 45ns typical

Note: Product images are for illustrative purposes only and may differ from the actual product.

UTT50N06MG N-Channel MOSFET TO-252 SMD Package | QuartzComponents