
UTT50N06MG N-Channel MOSFET TO-252 SMD Package
The UTT50N06MG is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-current, high-voltage switching applications. It is housed in a TO-252 surface-mount device (SMD) package, making it suitable for high-density circuit board layouts and efficient heat dissipation. Here’s a detailed description of the product:
Key Features:
- Type: N-Channel MOSFET
- Package: TO-252 (Surface Mount Device)
- Polarity: N-Channel
- Maximum Drain-Source Voltage (Vds): 60V
- Maximum Continuous Drain Current (Id): 50A
- Maximum Power Dissipation (Pd): 125W
- Low On-Resistance (Rds(on)): Typically 0.015Ω at Vgs = 10V
- Gate Threshold Voltage (Vgs(th)): 2V to 4V
Applications:
- Load Switching: Ideal for switching high-voltage and high-current loads.
- Power Management: Suitable for use in power management applications in industrial and automotive systems.
- Motor Drives: Commonly used in motor control and drive applications due to its high current capability.
- DC-DC Converters: Can be used in high-efficiency DC-DC converter circuits.
- Battery Protection: Useful in battery management systems for overcurrent protection.
Pin Configuration:
- Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.
- Pin 2 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.
- Pin 3 (Source): The source terminal, which is typically connected to the negative side of the load.
- Tab (Drain): The tab is electrically connected to the drain terminal, providing a low-resistance path for heat dissipation.
Electrical Characteristics:
- Vds (Drain-Source Voltage): 60V max
- Vgs (Gate-Source Voltage): ±20V max
- Id (Continuous Drain Current): 50A max
- Ptot (Total Power Dissipation): 125W max
- Rds(on) (On-Resistance): 0.015Ω typical at Vgs = 10V
- Qg (Total Gate Charge): 100nC typical
- td(on) (Turn-On Delay Time): 20ns typical
- td(off) (Turn-Off Delay Time): 45ns typical
Note: Product images are for illustrative purposes only and may differ from the actual product.
The UTT50N06MG is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-current, high-voltage switching applications. It is housed in a TO-252 surface-mount device (SMD) package, making it suitable for high-density circuit board layouts and efficient heat dissipation. Here’s a detailed description of the product:
Key Features:
- Type: N-Channel MOSFET
- Package: TO-252 (Surface Mount Device)
- Polarity: N-Channel
- Maximum Drain-Source Voltage (Vds): 60V
- Maximum Continuous Drain Current (Id): 50A
- Maximum Power Dissipation (Pd): 125W
- Low On-Resistance (Rds(on)): Typically 0.015Ω at Vgs = 10V
- Gate Threshold Voltage (Vgs(th)): 2V to 4V
Applications:
- Load Switching: Ideal for switching high-voltage and high-current loads.
- Power Management: Suitable for use in power management applications in industrial and automotive systems.
- Motor Drives: Commonly used in motor control and drive applications due to its high current capability.
- DC-DC Converters: Can be used in high-efficiency DC-DC converter circuits.
- Battery Protection: Useful in battery management systems for overcurrent protection.
Pin Configuration:
- Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.
- Pin 2 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.
- Pin 3 (Source): The source terminal, which is typically connected to the negative side of the load.
- Tab (Drain): The tab is electrically connected to the drain terminal, providing a low-resistance path for heat dissipation.
Electrical Characteristics:
- Vds (Drain-Source Voltage): 60V max
- Vgs (Gate-Source Voltage): ±20V max
- Id (Continuous Drain Current): 50A max
- Ptot (Total Power Dissipation): 125W max
- Rds(on) (On-Resistance): 0.015Ω typical at Vgs = 10V
- Qg (Total Gate Charge): 100nC typical
- td(on) (Turn-On Delay Time): 20ns typical
- td(off) (Turn-Off Delay Time): 45ns typical
Note: Product images are for illustrative purposes only and may differ from the actual product.
Original: $0.23
-65%$0.23
$0.08Description
The UTT50N06MG is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-current, high-voltage switching applications. It is housed in a TO-252 surface-mount device (SMD) package, making it suitable for high-density circuit board layouts and efficient heat dissipation. Here’s a detailed description of the product:
Key Features:
- Type: N-Channel MOSFET
- Package: TO-252 (Surface Mount Device)
- Polarity: N-Channel
- Maximum Drain-Source Voltage (Vds): 60V
- Maximum Continuous Drain Current (Id): 50A
- Maximum Power Dissipation (Pd): 125W
- Low On-Resistance (Rds(on)): Typically 0.015Ω at Vgs = 10V
- Gate Threshold Voltage (Vgs(th)): 2V to 4V
Applications:
- Load Switching: Ideal for switching high-voltage and high-current loads.
- Power Management: Suitable for use in power management applications in industrial and automotive systems.
- Motor Drives: Commonly used in motor control and drive applications due to its high current capability.
- DC-DC Converters: Can be used in high-efficiency DC-DC converter circuits.
- Battery Protection: Useful in battery management systems for overcurrent protection.
Pin Configuration:
- Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.
- Pin 2 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.
- Pin 3 (Source): The source terminal, which is typically connected to the negative side of the load.
- Tab (Drain): The tab is electrically connected to the drain terminal, providing a low-resistance path for heat dissipation.
Electrical Characteristics:
- Vds (Drain-Source Voltage): 60V max
- Vgs (Gate-Source Voltage): ±20V max
- Id (Continuous Drain Current): 50A max
- Ptot (Total Power Dissipation): 125W max
- Rds(on) (On-Resistance): 0.015Ω typical at Vgs = 10V
- Qg (Total Gate Charge): 100nC typical
- td(on) (Turn-On Delay Time): 20ns typical
- td(off) (Turn-Off Delay Time): 45ns typical
Note: Product images are for illustrative purposes only and may differ from the actual product.
























